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Power Integrations

austriamicrosystems

EDN-PowerSource

« November 2008 | Main | April 2009 »

March 31, 2009

Eudyna GaN HEMTs High Electron Mobility Transistors

  Features  
Eudyna Devices EGNB010MK
  • 100W in 0.2cc (500W/cc), 180W in 1.2cc (150W/cc)
  • High Channel Temperature (Tch): Up to 250°C
  • Higher Impedance: ~50Ω (Easy to Match)
  • High Operating Voltage: 50V
  • High Breakdown Voltage: 350V
Cosel USA DC DC Converters for GaN products
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Part Number Frequency (GHz) P3dB Typ. (dBm) GL Typ. (dB) η@P3dB Typ. (%)
EGNB045MK 2.2 47.5 13.0 60
EGNB030MK 2.7 46.5 13.0 60
EGNB010MK 3.5 41.0 13.0 60

>View ALL Eudyna Products

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Posted at 02:00 PM in Product Highlight | | Comments (0) | TrackBack (0)